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Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD

Identifieur interne : 000316 ( Main/Repository ); précédent : 000315; suivant : 000317

Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD

Auteurs : RBID : Pascal:13-0081335

Descripteurs français

Pascal (Inist)
- Indium, Ségrégation, Semiconducteur III-V, Composé III-V, Hétérostructure, Méthode MOCVD, Modèle thermodynamique, Modèle cinétique, Mécanisme croissance, Puits quantique, Nanomatériau, Composé de l'indium, Arséniure d'indium, Arséniure de gallium, Gallium, In, InGaAs, GaAs, AsH3, 6540G, 6855A, 6475, 8115G.

English descriptors

KwdEn :
- Gallium, Gallium arsenides, Growth mechanism, Heterostructures, III-V compound, III-V semiconductors, Indium, Indium arsenides, Indium compounds, Kinetic model, MOCVD, Nanostructured materials, Quantum wells, Segregation, Thermodynamic model.

Abstract

In this paper a thermodynamic-kinetic model of the MOCVD growth process of InGaAs/GaAs heterostructures with quantum wells using Ga(C₂H₅)₃-In(CH₃)₃-AsH₃ system materials was worked out. The effect of segregation broadening was taken into account in that model. Using this model, methods of considerable decreasing of indium segregation were investigated.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD</title>
<author><name sortKey="Sozykin, A S" uniqKey="Sozykin A">A. S. Sozykin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Bauman Moscow Technical University, Kaluga Branch, Bazhenov str. 2</s1>
<s2>Kaluga 248000</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Kaluga 248000</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Strelchenko, S S" uniqKey="Strelchenko S">S. S. Strelchenko</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Bauman Moscow Technical University, Kaluga Branch, Bazhenov str. 2</s1>
<s2>Kaluga 248000</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Kaluga 248000</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Prokolkin, E V" uniqKey="Prokolkin E">E. V. Prokolkin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Bauman Moscow Technical University, Kaluga Branch, Bazhenov str. 2</s1>
<s2>Kaluga 248000</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Kaluga 248000</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ladugin, M A" uniqKey="Ladugin M">M. A. Ladugin</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Sigm Plus Co., Vvedenskogo Str. 3</s1>
<s2>Moscow 117342</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0081335</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0081335 INIST</idno>
<idno type="RBID">Pascal:13-0081335</idno>
<idno type="wicri:Area/Main/Corpus">001280</idno>
<idno type="wicri:Area/Main/Repository">000316</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium</term>
<term>Gallium arsenides</term>
<term>Growth mechanism</term>
<term>Heterostructures</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium</term>
<term>Indium arsenides</term>
<term>Indium compounds</term>
<term>Kinetic model</term>
<term>MOCVD</term>
<term>Nanostructured materials</term>
<term>Quantum wells</term>
<term>Segregation</term>
<term>Thermodynamic model</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Indium</term>
<term>Ségrégation</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Hétérostructure</term>
<term>Méthode MOCVD</term>
<term>Modèle thermodynamique</term>
<term>Modèle cinétique</term>
<term>Mécanisme croissance</term>
<term>Puits quantique</term>
<term>Nanomatériau</term>
<term>Composé de l'indium</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Gallium</term>
<term>In</term>
<term>InGaAs</term>
<term>GaAs</term>
<term>AsH3</term>
<term>6540G</term>
<term>6855A</term>
<term>6475</term>
<term>8115G</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this paper a thermodynamic-kinetic model of the MOCVD growth process of InGaAs/GaAs heterostructures with quantum wells using Ga(C<sub>2</sub>
H<sub>5</sub>
)<sub>3</sub>
-In(CH<sub>3</sub>
)<sub>3</sub>
-AsH<sub>3</sub>
 system materials was worked out. The effect of segregation broadening was taken into account in that model. Using this model, methods of considerable decreasing of indium segregation were investigated.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>363</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>SOZYKIN (A. S.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>STRELCHENKO (S. S.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>PROKOLKIN (E. V.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>LADUGIN (M. A.)</s1>
</fA11>
<fA14 i1="01"><s1>Bauman Moscow Technical University, Kaluga Branch, Bazhenov str. 2</s1>
<s2>Kaluga 248000</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Sigm Plus Co., Vvedenskogo Str. 3</s1>
<s2>Moscow 117342</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>253-257</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000506270830410</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>12 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0081335</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this paper a thermodynamic-kinetic model of the MOCVD growth process of InGaAs/GaAs heterostructures with quantum wells using Ga(C<sub>2</sub>
H<sub>5</sub>
)<sub>3</sub>
-In(CH<sub>3</sub>
)<sub>3</sub>
-AsH<sub>3</sub>
 system materials was worked out. The effect of segregation broadening was taken into account in that model. Using this model, methods of considerable decreasing of indium segregation were investigated.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60D75</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15G</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60E40G</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A15A</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Ségrégation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Segregation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Modèle thermodynamique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Thermodynamic model</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Modèle cinétique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Kinetic model</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Modelo cinético</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Composé de l'indium</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium compounds</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Gallium</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>In</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>AsH3</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>6540G</s0>
<s4>INC</s4>
<s5>65</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>6855A</s0>
<s4>INC</s4>
<s5>66</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>6475</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>8115G</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fN21><s1>049</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD

Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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